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?Semiconductor Components Industries, LLC, 2011
January, 2011  Rev. 9
1
Publication Order Number:
NIS5112/D
NIS5112
Electronic Fuse
The NIS5112 is an integrated switch utilizing a high side Nchannel
FET driven by an internal charge pump. This switch features a
SENSEFET?which allows for current sensing using inexpensive
chip resistors instead of expensive, low impedance current shunts.
It is designed to operate in 12 V systems and includes a robust
thermal protection circuit.
Features
" Integrated Power Device
" Power Device Thermally Protected
" No External Current Shunt Required
" Enable/Timer Pin
" Adjustable Slew Rate for Output Voltage
" 9 V to 18 V Input Range
" 30 mW Typical
" Internal Charge Pump
" ESD Ratings: Human Body Model (HBM); 4000 V
" These are PbFree Devices
Typical Applications
" Hard Drives
Figure 1. Block Diagram
Current Limit
Source
dV/dt
GND
Enable/Timer
Thermal
Latch
Voltage
Regulator
Charge
Pump
Current
Limit
Enable/
Timer
Voltage
Slew Rate
8
V
CC
Overvoltage
Clamp
4
5, 6, 7
3
1
2
SOIC8 NB
CASE 751
Device
Package
Shipping
 
ORDERING INFORMATION
MARKING
DIAGRAM
NIS5112D1R2G
SOIC8
Latch Off
(PbFree)
2500
Tape & Reel
NIS5112D2R2G
SOIC8
AutoRetry
(PbFree)
2500 /
Tape & Reel
 For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
http://onsemi.com
1
8
x
= L for thermal latch off
= H for thermal autoretry
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= PbFree Package
(Note: Microdot may be in either location)
112x
AYWWG
G
1
8
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